(Hong Kong)
Product Summary
The 2SK1317 is a silicon n-channel mos fet.
Parametrics
2SK1317 absolute maximum ratings: (1)Drain to source voltage VDSS: 1500 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 2.5 A; (4)Drain peak current ID(pulse)*1: 7 A; (5)Body to drain diode reverse drain current IDR: 2.5 A; (6)Channel dissipation Pch*2: 100 W; (7)Channel temperature Tch: 150 °C; (8)Storage temperature Tstg: －55 to +150 °C.
Features
2SK1317 features: (1) High breakdown voltage (VDSS = 1500 V); (2) High speed switching; (3) Low drive current; (4) No Secondary Breakdown; (5) Suitable for Switching regulator, DC-DC converter.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SK1317 |
Other |
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Data Sheet |
Negotiable |
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2SK1056 |
Other |
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Data Sheet |
Negotiable |
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2SK1057 |
Other |
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Data Sheet |
Negotiable |
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2SK1058 |
Other |
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Data Sheet |
Negotiable |
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2SK1058-E |
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MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
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2SK1061 |
Other |
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Data Sheet |
Negotiable |
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2SK1062 |
Other |
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Data Sheet |
Negotiable |
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