Product Summary
The US6J2TR is a silicon P-Channel MOSFET.
Parametrics
US6J2TR absolute maximum ratings: (1)Drain-source voltage VDSS: -20V; (2)Gate-source voltage VGSS: ±12V; (3)Drain current continuous ID: ±1A; (4)Source current continuous IS: -0.4A; (5)Total power dissipation PD: 1.0W; (6)Channel temperature Tch: 150℃; (7)Range of strage temperature Tstg: -55 to 150℃.
Features
US6J2TR features: (1)Gate-source leakage IGSS: ±10μA; (2)Drain-source breakdown voltage V(BR)DSS: -20V; (3)Zero gate voltage drain current IDSS: -1μA; (4)Gatea threshold voltage VGS(th): -0.7V to -2.0V; (5)Forward transfer admittance: 0.7S; (6)Input capacitance Ciss: 150pF; (7)Output capacitance Coss: 20pF; (8)Reverse transfer capacitance Crss: 20pF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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US6J2TR |
ROHM Semiconductor |
MOSFET 2P-CH 20V 1A |
Data Sheet |
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US6J11TR |
MOSFET 2P-CH 12V 1.3A TUMT6 |
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US6J2 |
Other |
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Negotiable |
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US6J2TR |
ROHM Semiconductor |
MOSFET 2P-CH 20V 1A |
Data Sheet |
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US6J2PAK |
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Fuseholders, Clips, & Hardware ASSEM KIT for LFPSJ 60A 2 Pole |
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