(Hong Kong)
Product Summary
The RTQ040P02TR is a 2.5V Drive Pch MOS FET. It is suitable for DC-DC converter.
Parametrics
RTQ040P02TR absolute maximum ratings: (1)Drain-source voltage, VDSS: -20V; (2)Gate-source voltage, VGSS: ±12V; (3)Drain current, contimuous, ID: ±4.0A; pulsed, IDP: ±16A; (4)source current (body diode), continuous, IS: -1A; pulsed, ISP: -16A; (5)Total power dissipation, PD: 1.25W; (6)Channel temperature, Tch: 150℃; (7)Range of Storage temperature, Tstg: -55 to 150℃.
Features
RTQ040P02TR features: (1)Low on-resistance. (60mΩ at 2.5V); (2)High power package; (3)High speed switching; (4)Low voltage drive. (2.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 RTQ040P02TR |
ROHM Semiconductor |
MOSFET P-CH 20V 4A TSMT6 |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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RTQ020N03TR |
ROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT6 |
Data Sheet |
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 |
RTQ020N05TR |
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MOSFET N-CH 45V 2A TSMT6 |
Data Sheet |
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RTQ025P02 |
Other |
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Data Sheet |
Negotiable |
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RTQ025P02TR |
ROHM Semiconductor |
MOSFET P-CH 20V 2.5A TSMT6 |
Data Sheet |
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RTQ030P02 |
Other |
|
Data Sheet |
Negotiable |
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RTQ030P02TR |
ROHM Semiconductor |
MOSFET P-CH 20V 3A TSMT6 |
Data Sheet |
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