Product Summary
FQP6N80C is N-Channel enhancement mode power field effect transistors which are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Parametrics
Absolute Maximum Ratings: (1)Drain-Source Voltage, VDSS: 800V; (2)Drain Current - Continuous (TC = 25°C), ID: 5.5A; (3)Drain Current - Continuous (TC = 100°C), ID: 3.2A; (4)Drain Current - Pulsed, IDM: 22A; (5)Gate-Source Voltage, VGSS: ± 30 V; (6)Single Pulsed Avalanche Energy, EAS: 680 mJ; (7)Avalanche Current, IAR: 5.5 A; (8)Repetitive Avalanche Energy, EAR: 15.8 mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 4.5 V/ns; (10)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150 °C; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds, TL: 300 °C.
Features
Features: (1)5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V; (2)Low gate charge ( typical 21 nC); (3)Low Crss ( typical 8 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FQP6N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FQP60N03L |
Fairchild Semiconductor |
MOSFET TO-220 |
Data Sheet |
Negotiable |
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Fairchild Semiconductor |
MOSFET 200V N-Channel QFET |
Data Sheet |
Negotiable |
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FQP630TSTU |
Fairchild Semiconductor |
MOSFET Short Leads |
Data Sheet |
Negotiable |
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FQP65N06 |
Fairchild Semiconductor |
MOSFET TO-220 N-CH 60V 65A |
Data Sheet |
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FQP65N06_Q |
Fairchild Semiconductor |
MOSFET TO-220 N-CH 60V 65A |
Data Sheet |
Negotiable |
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FQP6N15 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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