Product Summary
The RHP020N06T100 is a 4V Drive Nch MOSFET. It is suitable for switching.
Parametrics
RHP020N06T100 absolute maximum ratings: (1)Drain-source voltage, VDSS: 60V; (2)Gate-source voltage, VGSS: ±20V; (3)Drain current, continuous, ID: ±2A; pulsed, IDP: ±8A; (4)source current, continuous, IS: 2A; pulsed, ISP: 8A; (5)Total power dissipation, PD: 500mW; (6)Channel temperature, Tch: 150℃; (7)Range of storage temperature, Tstg: -55 to 150℃.
Features
RHP020N06T100 features: (1)Low On-resistance; (2)High speed switching; (3)Wide SOA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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RHP020N06T100 |
ROHM Semiconductor |
MOSFET N-CH 60V 200MA |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
RHP020N06T100 |
ROHM Semiconductor |
MOSFET N-CH 60V 200MA |
Data Sheet |
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RHP030N03T100 |
ROHM Semiconductor |
MOSFET N-CH 30V 300MA |
Data Sheet |
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RHP020N06 |
Other |
Data Sheet |
Negotiable |
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