Product Summary

The FZ1050R12KF4 is an IGBT Module.

Parametrics

FZ1050R12KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200 V; (2)DC-collector current, IC: 1050 A; (3)repetitive peak collctor current, ICRM, tp=1 ms: 2100 A; (4)total power dissipation, TC=25℃, Transistor /transistor, Ptot: 7 kW; (5)gate-emitter peak voltage, VGE: ± 20 V; (6)DC forward current, IF: 1050 A; (7)repetitive peak forw. current, tp=1ms, IFRM: 2100 A; (8)insulation test voltage, RMS, f=50 Hz, t= 1 min. VISOL: 2,5 kV.

Features

FZ1050R12KF4 features: (1)internal insulation: AI2O3; (2)mounting torque, terminals M6 / tolerance +/-15%, M1: 3 Nm; (3)terminal connection torque, M2: terminals M4 / tolerance +/-15%: 2 Nm; terminals, M8: 8 to 10 Nm; (4)weight, G: ca. 1500 g.

Diagrams

FZ1050R12KF4 circuit diagram

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