(Hong Kong)
Product Summary
The TLP181GR is a small outline coupler, suitable for surface mount assembly. TLP181 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode.
Parametrics
TLP181GR absolute maixmum ratings: (1)Forward current IF: 50 mA; (2)Forward current detating ΔIF / ℃ -0.7 (Ta ≥ 53℃) mA / ℃; (3)Pulse forward current (100μs pulse, 100pps) IFP: 1 A; (4)Reverse voltage VR: 5 V; (5)Junction temperature Tj: 125 ℃; (6)Collector emitter voltage VCEO: 80 V; (7)Emitter collector voltage VECO: 7 V; (8)Collector current IC: 50 mA; (9)Collector power dissipation (1 Circuit) PC: 150 mW; (10)Collector power dissipation derating (1 Circuit Ta ≥ 25℃) ΔPC / ℃: -1.5 mW / ℃; (11)Junction temperature Tj: 125 ℃; (12)Storage temperature range Tstg: -55~125 ℃; (13)Operating temperature range Topr: -55~100 ℃; (14)Lead soldering temperature Tsol: 260 (10s) ℃; (15)Total package power dissipation PT: 200 mW; (16)Total package power dissipation derating (Ta ≥ 25℃) ΔPT / ℃: -2.0 mW / ℃; (17)Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 1), BVS: 3750 Vrms.
Features
TLP181GR features: (1)Collector emitter voltage: 80V (min.); (2)Current transfer ratio: 50% (min.); Rank GB: 100% (min.); (3)Isolation voltage: 3750Vrms (min.); (4)UL recognized: UL1577, file no. E67349; (5)Option (V4) type, VDE approved: EN 60747-5-2 satisfied; (6)Maximum operating insulation voltage: 565VPK; (7)Highest permissible over voltage: 6000VPK; (8)BSI approved: BS EN60065:2002, certificate no.8285; BS EN60950-1:2002, certificate no.8286.
Diagrams
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TLP1006A |
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