(Hong Kong)
Product Summary
The BSM200GB120DN2 is an IGBT Power Module.
Parametrics
BSM200GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 290A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 580A; (6)Power dissipation per IGBT: 1400W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.09 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.18K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.
Features
BSM200GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSM200GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A DUAL |
Data Sheet |
|
|
||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
|
BSM200GA120D |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||
|
BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
|
|
||||||||||
|
BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
|
|
||||||||||
|
BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
|
|
||||||||||
|
BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
|
|
||||||||||
|
BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
|
|
||||||||||
