Product Summary

The 2SD1664T100R is a medium power transistor (32V, 1A).

Parametrics

2SD1664T100R absolute maximum ratings: (1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150℃;(6)storage temperature: -55 to +150℃;(7)Collector power dissipation: 0.5 or 2 W.

Features

2SD1664T100R features: (1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

Diagrams

2SD1664T100R external dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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2SD1664T100R
2SD1664T100R

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 32V 1A

Data Sheet

0-1: $0.33
1-25: $0.25
25-100: $0.18
100-500: $0.12
500-1000: $0.09
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