Product Summary
The RA30H3340M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
Features
? Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=12.5V, VGG=0V)
? Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
? Broadband Frequency Range: 330-400MHz
? Low-Power Control Current IGG=1mA (typ) at VGG=5V
? 66 x 21 x 9.8 mm
? Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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RA30H3340M |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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Data Sheet |
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